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FDMS7600AS Dual N-Channel PowerTrench(R) MOSFET
December 2009
FDMS7600AS
Dual N-Channel PowerTrench(R) MOSFET
N-Channel: 30 V, 30 A, 7.5 m N-Channel: 30 V, 40 A, 2.8 m
Features
Q1: N-Channel Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 A Max rDS(on) = 12 m at VGS = 4.5 V, ID = 10 A Q2: N-Channel Max rDS(on) = 2.8 m at VGS = 10 V, ID = 20 A Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 18 A RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
Applications
Computing Communications General Purpose Point of Load Notebook VCORE
S2 S1/D2 D1 D1 Top Power 56 D1 D1
S2
S2
G2
S2 S2 S2
5 6 7 8
Q2
4 D1 3 D1 2 D1
Q1
G1 Bottom
G2
1 G1
MOSFET Maximum Ratings TA = 25 C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation for Single Operation Operating and Storage Junction Temperature Range TA = 25 C TA = 25 C (Note 3) TC = 25 C TC = 25 C TA = 25 C Q1 30 20 30 50 121a 40 2.21a 1.01c Q2 30 20 40 120 221b 60 2.51b 1.01d W C A Units V V
-55 to +150
Thermal Characteristics
RJA RJA RJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case 571a 1251c 3.5 501b 1201d 2 C/W
Package Marking and Ordering Information
Device Marking FDMS7600AS Device FDMS7600AS Package Power 56 Reel Size 13 " Tape Width 12 mm Quantity 3000 units
(c)2009 Fairchild Semiconductor Corporation FDMS7600AS Rev.C
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FDMS7600AS Dual N-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25 C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 1 mA, VGS = 0 V ID = 250 A, referenced to 25 C ID = 1 mA, referenced to 25 C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS= 0 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 30 30 15 18 1 500 100 100 V mV/C A A nA nA
On Characteristics
VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250 A VGS = VDS, ID = 1 mA ID = 250 A, referenced to 25 C ID = 1 mA, referenced to 25 C VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 10 A VGS = 10 V, ID = 12 A , TJ = 125 C VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 18 A VGS = 10 V, ID = 20 A , TJ = 125 C VDS = 5 V, ID = 12 A VDS = 5 V, ID = 20 A Q1 Q2 Q1 Q2 Q1 1 1 1.8 1.5 -6 -5 6.0 8.5 8.3 2.2 2.6 2.6 63 190 7.5 12 12 2.8 3.3 3.8 3 3 V mV/C
rDS(on)
Drain to Source On Resistance
m
Q2 Q1 Q2
gFS
Forward Transconductance
S
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Q1: VDS = 15 V, VGS = 0 V, f = 1 MHZ Q2: VDS = 15 V, VGS = 0 V, f = 1 MHZ Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 1315 5265 445 2150 45 200 0.9 0.3 1750 7005 600 2860 70 300 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge Q1: VDD = 15 V, ID = 12 A, VGS = 10 V, RGEN = 6 Q2: VDD = 15 V, ID = 20 A, VGS = 10 V, RGEN = 6 VGS = 0 V to 10 V Q1 VDD = 15 V, VGS = 0 V to 4.5 V ID = 12 A Q2 VDD = 15 V, ID = 20 A Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 8.6 18 2.5 7.6 20 45 2.3 5.2 20 81 9.3 37 4.3 13 2.2 9.6 18 32 10 16 32 72 10 10 28 113 13 52 ns ns ns ns nC nC nC nC
(c)2009 Fairchild Semiconductor Corporation FDMS7600AS Rev.C
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FDMS7600AS Dual N-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25 C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 12 A VGS = 0 V, IS = 20 A Q1 IF = 12 A, di/dt = 100 A/s Q2 IF = 20 A, di/dt = 300 A/s (Note 2) (Note 2) Q1 Q2 Q1 Q2 Q1 Q2 0.8 0.7 27 47 10 80 1.2 1.2 43 75 18 128 V ns nC
Notes: 1: RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 57 C/W when mounted on a 1 in2 pad of 2 oz copper b. 50 C/W when mounted on a 1 in2 pad of 2 oz copper
c. 125 C/W when mounted on a minimum pad of 2 oz copper
d. 120 C/W when mounted on a minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3: As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
(c)2009 Fairchild Semiconductor Corporation FDMS7600AS Rev.C
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FDMS7600AS Dual N-Channel PowerTrench(R) MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25 C unless otherwise noted
40
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V
4
VGS = 6 V
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
30
VGS = 4.5 V VGS = 4 V
3
VGS = 3.5 V VGS = 4 V
20
2
VGS = 4.5 V
10
VGS = 3.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
1
VGS = 6 V
0 0 10 20 ID, DRAIN CURRENT (A) 30
VGS = 10 V
0 0.0
0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
40
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
40
SOURCE ON-RESISTANCE (m)
1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 12 A VGS = 10 V
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
rDS(on), DRAIN TO
1.4
30
ID = 12 A
1.2
20
TJ = 125 oC
1.0
10
TJ = 25 oC
0.8 -75
0
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction Temperature
40
IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
Figure 4. On-Resistance vs Gate to Source Voltage
40
VGS = 0 V
10
ID, DRAIN CURRENT (A)
30
VDS = 5 V TJ = 150 oC TJ = 25 oC
1
TJ = 150 oC TJ = 25 oC
20
0.1
10
TJ = -55 oC
0.01
TJ = -55 oC
0 1.5
2.0
2.5
3.0
3.5
4.0
0.001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
(c)2009 Fairchild Semiconductor Corporation FDMS7600AS Rev.C
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FDMS7600AS Dual N-Channel PowerTrench(R) MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25 C unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 12 A
2000 1000
Ciss
8 6
VDD = 15 V
CAPACITANCE (pF)
VDD = 10 V
Coss
4
VDD = 20 V
100
2 0 0 5 10
Qg, GATE CHARGE (nC)
Crss
f = 1 MHz VGS = 0 V
15
20
10 0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
100
60
VGS = 10 V RJC = 3.5 C/W
ID, DRAIN CURRENT (A)
o
ID, DRAIN CURRENT (A)
100us
10
1 ms
40
VGS = 4.5 V
1
THIS AREA IS LIMITED BY rDS(on)
10 ms 100 ms
20
Limited by Package
0.1
SINGLE PULSE TJ = MAX RATED RJA = 125 oC/W TA = 25 oC
1s
10s
DC 1 10 100 200
0 25
50
75
100
o
125
150
0.01 0.01
0.1
TC, CASE TEMPERATURE ( C)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Maximum Continuous Drain Current vs Case Temperature
1000
P(PK), PEAK TRANSIENT POWER (W)
Figure 10. Forward Bias Safe Operating Area
SINGLE PULSE RJA = 125 C/W
o o
100
TA = 25 C
10
1
0.5 -4 10
10
-3
10
-2
10
-1
1
10
100
1000
t, PULSE WIDTH (s)
Figure 11. Single Pulse Maximum Power Dissipation
(c)2009 Fairchild Semiconductor Corporation FDMS7600AS Rev.C
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FDMS7600AS Dual N-Channel PowerTrench(R) MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25 C unless otherwise noted
2
1
NORMALIZED THERMAL IMPEDANCE, ZJA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.01
t1
SINGLE PULSE RJA = 125 C/W
(Note 1c)
o
t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
-1
0.001 -4 10
10
-3
10
-2
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
(c)2009 Fairchild Semiconductor Corporation FDMS7600AS Rev.C
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FDMS7600AS Dual N-Channel PowerTrench(R) MOSFET
Typical Characteristics (Q2 N-Channel) TJ =
60
VGS = 10 V
25 oC unlenss otherwise noted
3
VGS = 6 V
ID, DRAIN CURRENT (A)
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 3 V
40
VGS = 4.5 V VGS = 3.5 V
2
VGS = 3.5 V VGS = 4.5 V
20
VGS = 3 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
1
VGS = 6 V VGS = 10 V
0 0.0
0 0 20
ID, DRAIN CURRENT (A)
0.1 0.2 0.3 VDS, DRAIN TO SOURCE VOLTAGE (V)
0.4
40
60
Figure 13. On-Region Characteristics
Figure 14. Normalized on-Resistance vs Drain Current and Gate Voltage
10
SOURCE ON-RESISTANCE (m)
1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.4 1.2 1.0 0.8 0.6 -75
ID = 20 A VGS = 10 V
rDS(on), DRAIN TO
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
8
ID = 20 A
6 4 2
TJ = 25 oC
TJ = 125 oC
-50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
0 2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Normalized On-Resistance vs Junction Temperature
Figure 16. On-Resistance vs Gate to Source Voltage
60
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
60
VGS = 0 V
ID, DRAIN CURRENT (A)
VDS = 5 V
10
TJ = 125 oC
40
TJ = 125 oC
1
TJ = 25 oC
20
TJ = 25 oC TJ = -55 oC
0.1
TJ = -55 oC
0 1.0
1.5
2.0
2.5
3.0
0.01 0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 17. Transfer Characteristics
Figure 18. Source to Drain Diode Forward Voltage vs Source Current
(c)2009 Fairchild Semiconductor Corporation FDMS7600AS Rev.C
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FDMS7600AS Dual N-Channel PowerTrench(R) MOSFET
Typical Characteristics (Q2 N-Channel) TJ = 25 oC unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 20A
10000
Ciss
VDD = 10 V
8 6
VDD = 15 V
CAPACITANCE (pF)
Coss
1000
4
VDD = 20 V
2
f = 1 MHz VGS = 0 V
Crss
0 0 30 60 90
Qg, GATE CHARGE (nC)
100 0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 19. Gate Charge Characteristics
Figure 20. Capacitance vs Drain to Source Voltage
100
150
VGS = 10 V RJC = 2 C/W
ID, DRAIN CURRENT (A)
o
ID, DRAIN CURRENT (A)
120 90
VGS = 4.5 V
10
1 ms 10 ms 100 ms 1s 10s DC
1
60 30
Limited by Package
THIS AREA IS LIMITED BY rDS(on)
0.1
SINGLE PULSE TJ = MAX RATED RJA = 120 oC/W TA = 25 oC
0 25
50
75
100
o
125
150
0.01 0.01
0.1
1
10
100 200
TC, CASE TEMPERATURE ( C)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 21. Maximun Continuous Drain Current vs Case Temperature
1000
P(PK), PEAK TRANSIENT POWER (W)
Figure 22. Forward Bias Safe Operating Area
SINGLE PULSE RJA = 120 C/W
o o
100
TA = 25 C
10
1
0.5 -3 10
10
-2
10
-1
1
t, PULSE WIDTH (s)
10
100
1000
Figure 23. Single Pulse Maximum Power Dissipation
(c)2009 Fairchild Semiconductor Corporation FDMS7600AS Rev.C
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FDMS7600AS Dual N-Channel PowerTrench(R) MOSFET
Typical Characteristics (Q2 N_Channel)
TJ = 25 oC unless otherwise noted
2
1
NORMALIZED THERMAL IMPEDANCE, ZJA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1
0.01
SINGLE PULSE RJA = 120 C/W (Note 1d)
o
t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
0.001 -3 10
10
-2
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure24. Junction-to-Ambient Transient Thermal Response Curve
(c)2009 Fairchild Semiconductor Corporation FDMS7600AS Rev.C
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FDMS7600AS Dual N-Channel PowerTrench(R) MOSFET
Typical Characteristics (continued)
SyncFET Schottky body diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 25 shows the reverse recovery characteristic of the FDMS7600AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
IDSS, REVERSE LEAKAGE CURRENT (A)
15
10 10 10 10 10 10
-1
-2
TJ = 125 oC
10
CURRENT (A)
didt = 300 A/s
-3
TJ = 100 oC
5
-4
0
-5
TJ = 25 oC
-5 150
-6
200
TIME (ns)
250
300
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
Figure 25. FDMS7600AS SyncFET body diode reverse recovery characteristic
Figure 26. SyncFET body diode reverse leakage versus drain-source voltage
(c)2009 Fairchild Semiconductor Corporation FDMS7600AS Rev.C
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FDMS7600AS Dual N-Channel PowerTrench(R) MOSFET
Dimensional Outline and Pad Layout
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FDMS7600AS Dual N-Channel PowerTrench(R) MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPowerTM PowerTrench(R) FPSTM The Power Franchise(R) Auto-SPMTM F-PFSTM PowerXSTM (R) Build it NowTM FRFET(R) Programmable Active DroopTM CorePLUSTM Global Power ResourceSM QFET(R) TinyBoostTM Green FPSTM QSTM CorePOWERTM TinyBuckTM Green FPSTM e-SeriesTM Quiet SeriesTM CROSSVOLTTM TinyCalcTM GmaxTM RapidConfigureTM CTLTM TinyLogic(R) Current Transfer LogicTM GTOTM TINYOPTOTM EcoSPARK(R) IntelliMAXTM TM TinyPowerTM EfficentMaxTM Saving our world, 1mW /W /kW at a timeTM ISOPLANARTM TinyPWMTM EZSWITCHTM* SmartMaxTM MegaBuckTM TinyWireTM TM* SMART STARTTM MICROCOUPLERTM TriFault DetectTM SPM(R) MicroFETTM TRUECURRENTTM* STEALTHTM MicroPakTM (R) SuperFETTM MillerDriveTM (R) Fairchild SuperSOTTM-3 MotionMaxTM Fairchild Semiconductor(R) SuperSOTTM-6 UHC(R) Motion-SPMTM FACT Quiet SeriesTM Ultra FRFETTM SuperSOTTM-8 OPTOLOGIC(R) (R) FACT OPTOPLANAR(R) UniFETTM SupreMOSTM (R) (R) FAST VCXTM SyncFETTM FastvCoreTM VisualMaxTM Sync-LockTM FETBenchTM XSTM (R)* PDP SPMTM (R) FlashWriter * Power-SPMTM
tm
tm
tm
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ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I41
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
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